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August 2003
FDP6030L/FDB6030L
N-Channel Logic Level PowerTrench ? MOSFET
General Description
Features
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
? 48 A, 30 V
R DS(ON) = 13 m ? @ V GS = 10 V
R DS(ON) = 17 m ? @ V GS = 4.5 V
conventional switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R DS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
It has been optimized for low gate charge, low R DS(ON)
and fast switching speed.
? Critical DC electrical parameters specified at
elevated temperature
? High performance trench technology for extremely
low R DS(ON)
? 175 ° C maximum junction temperature rating
G
D
G
D
G
D
S
TO-220
FDP Series
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
30
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1)
48
A
– Pulsed
150
P D
T J , T STG
Total Power Dissipation @ T C = 25 ° C
Derate above 25 ° C
Operating and Storage Junction Temperature Range
52
0.3
–65 to +175
W
W/ ° C
° C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.9
62.5
° C/W
Package Marking and Ordering Information
Device Marking
FDB6030L
FDP6030L
Device
FDB6030L
FDP6030L
Reel Size
13’’
Tube
Tape width
24mm
n/a
Quantity
800 units
45
? 2003 Fairchild Semiconductor Corporation
FDP6030L/FDB6030L Rev E(W)
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